Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V, 30V |
VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Transistor-Typ: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | EMT6 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 10 kOhms, 1 kOhms |
Leistung - max: | 150mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | SOT-563, SOT-666 |
Andere Namen: | EMD30T2R-ND EMD30T2RTR |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 250MHz, 260MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 100mA, 200mA |
Basisteilenummer: | *MD30 |
Email: | [email protected] |