ECH8419-TL-H
ECH8419-TL-H
Artikelnummer:
ECH8419-TL-H
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 35V 9A ECH8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
9659 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ECH8419-TL-H.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.6V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-ECH
Serie:-
Rds On (Max) @ Id, Vgs:17 mOhm @ 5A, 10V
Verlustleistung (max):1.5W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Flat Lead
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:960pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4V, 10V
Drain-Source-Spannung (Vdss):35V
detaillierte Beschreibung:N-Channel 35V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Ta)
Email:[email protected]

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