DMT3011LDT-7
DMT3011LDT-7
Artikelnummer:
DMT3011LDT-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 30V 8A V-DFN3030-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
37796 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMT3011LDT-7.pdf

Einführung

We can supply DMT3011LDT-7, use the request quote form to request DMT3011LDT-7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMT3011LDT-7.The price and lead time for DMT3011LDT-7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMT3011LDT-7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:V-DFN3030-8 (Type K)
Serie:-
Rds On (Max) @ Id, Vgs:20 mOhm @ 6A, 10V
Leistung - max:1.9W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-VDFN Exposed Pad
Andere Namen:DMT3011LDT-7-ND
DMT3011LDT-7DITR
Betriebstemperatur:-55°C ~ 155°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:641pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:13.2nC @ 10V
Typ FET:2 N-Channel (Dual) Asymmetrical
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 8A, 10.7A 1.9W Surface Mount V-DFN3030-8 (Type K)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A, 10.7A
Email:[email protected]

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