DMN65D8LFB-7
DMN65D8LFB-7
Artikelnummer:
DMN65D8LFB-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-CH 60V 260MA 3DFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
33932 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMN65D8LFB-7.pdf

Einführung

We can supply DMN65D8LFB-7, use the request quote form to request DMN65D8LFB-7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMN65D8LFB-7.The price and lead time for DMN65D8LFB-7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMN65D8LFB-7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:X1-DFN1006-3
Serie:-
Rds On (Max) @ Id, Vgs:3 Ohm @ 115mA, 10V
Verlustleistung (max):430mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:3-UFDFN
Andere Namen:DMN65D8LFB-7-ND
DMN65D8LFB-7DITR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:20 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:25pF @ 25V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):5V, 10V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:260mA (Ta)
Email:[email protected]

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