DMN2029USD-13
DMN2029USD-13
Artikelnummer:
DMN2029USD-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 20V 5.8A 8SO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
11591 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMN2029USD-13.pdf

Einführung

We can supply DMN2029USD-13, use the request quote form to request DMN2029USD-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMN2029USD-13.The price and lead time for DMN2029USD-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMN2029USD-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 6.5A, 4.5V
Leistung - max:1.2W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:DMN2029USD-13DITR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1171pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:18.6nC @ 8V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 5.8A 1.2W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.8A
Email:[email protected]

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