DMN2016UTS-13
Artikelnummer:
DMN2016UTS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
51997 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMN2016UTS-13.pdf

Einführung

We can supply DMN2016UTS-13, use the request quote form to request DMN2016UTS-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMN2016UTS-13.The price and lead time for DMN2016UTS-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMN2016UTS-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:8-TSSOP
Serie:-
Rds On (Max) @ Id, Vgs:14.5 mOhm @ 9.4A, 4.5V
Leistung - max:880mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-TSSOP (0.173", 4.40mm Width)
Andere Namen:DMN2016UTS-13DICT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1495pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 4.5V
Typ FET:2 N-Channel (Dual) Common Drain
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Common Drain 20V 8.58A 880mW Surface Mount 8-TSSOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8.58A
Basisteilenummer:DMN2016U
Email:[email protected]

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