DMG6602SVTQ-7
DMG6602SVTQ-7
Artikelnummer:
DMG6602SVTQ-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N/P-CH 30V TSOT26
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
63758 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG6602SVTQ-7.pdf

Einführung

We can supply DMG6602SVTQ-7, use the request quote form to request DMG6602SVTQ-7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG6602SVTQ-7.The price and lead time for DMG6602SVTQ-7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG6602SVTQ-7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.3V @ 250µA
Supplier Device-Gehäuse:TSOT-26
Serie:-
Rds On (Max) @ Id, Vgs:60 mOhm @ 3.1A, 10V
Leistung - max:840mW
Verpackung:Original-Reel®
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Andere Namen:DMG6602SVTQ-7DIDKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:20 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-26
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.4A, 2.8A
Email:[email protected]

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