DF11MR12W1M1B11BOMA1
Artikelnummer:
DF11MR12W1M1B11BOMA1
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET MODULE 1200V 50A
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
31184 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DF11MR12W1M1B11BOMA1.pdf

Einführung

We can supply DF11MR12W1M1B11BOMA1, use the request quote form to request DF11MR12W1M1B11BOMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DF11MR12W1M1B11BOMA1.The price and lead time for DF11MR12W1M1B11BOMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DF11MR12W1M1B11BOMA1.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5.5V @ 20mA
Supplier Device-Gehäuse:Module
Serie:CoolSiC™
Rds On (Max) @ Id, Vgs:23 mOhm @ 50A, 15V
Leistung - max:20mW
Verpackung / Gehäuse:Module
Andere Namen:SP001602238
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:125nC @ 5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Silicon Carbide (SiC)
Drain-Source-Spannung (Vdss):1200V (1.2kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 50A 20mW Chassis Mount Module
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:50A
Email:[email protected]

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