CSD19532KTT
Artikelnummer:
CSD19532KTT
Hersteller:
TI
Beschreibung:
MOSFET N-CH 100V 200A DDPAK-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
44895 Pieces
Lieferzeit:
1-2 days
Datenblatt:
CSD19532KTT.pdf

Einführung

We can supply CSD19532KTT, use the request quote form to request CSD19532KTT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD19532KTT.The price and lead time for CSD19532KTT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD19532KTT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Prüfung:5060pF @ 50V
Spannung - Durchschlag:DDPAK/TO-263-3
VGS (th) (Max) @ Id:5.6 mOhm @ 90A, 10V
Vgs (Max):6V, 10V
Technologie:MOSFET (Metal Oxide)
Serie:NexFET™
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:200A (Ta)
Polarisation:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:296-44970-2
CSD19532KTT-ND
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsstufe (MSL):2 (1 Year)
Hersteller Standard Vorlaufzeit:13 Weeks
Hersteller-Teilenummer:CSD19532KTT
Eingabekapazität (Ciss) (Max) @ Vds:57nC @ 10V
IGBT-Typ:±20V
Gate Charge (Qg) (Max) @ Vgs:3.2V @ 250µA
FET-Merkmal:N-Channel
Expanded Beschreibung:N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3
Drain-Source-Spannung (Vdss):-
Beschreibung:MOSFET N-CH 100V 200A DDPAK-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100V
Kapazitätsverhältnis:250W (Tc)
Email:[email protected]

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