CSD19531Q5AT
Artikelnummer:
CSD19531Q5AT
Hersteller:
TI
Beschreibung:
MOSFET N-CH 100V 100A 8SON
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS-konform
verfügbare Anzahl:
65641 Pieces
Lieferzeit:
1-2 days
Datenblatt:
CSD19531Q5AT.pdf

Einführung

We can supply CSD19531Q5AT, use the request quote form to request CSD19531Q5AT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD19531Q5AT.The price and lead time for CSD19531Q5AT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD19531Q5AT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-VSONP (5x6)
Serie:NexFET™
Rds On (Max) @ Id, Vgs:6.4 mOhm @ 16A, 10V
Verlustleistung (max):3.3W (Ta), 125W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:296-37749-2
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:35 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3870pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):6V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100A (Ta)
Basisteilenummer:CSD19531
Email:[email protected]

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