BSP315PE6327T
BSP315PE6327T
Artikelnummer:
BSP315PE6327T
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET P-CH 60V 1.17A SOT-223
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
55340 Pieces
Lieferzeit:
1-2 days
Datenblatt:
BSP315PE6327T.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 160µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-SOT223-4
Serie:SIPMOS®
Rds On (Max) @ Id, Vgs:800 mOhm @ 1.17A, 10V
Verlustleistung (max):1.8W (Ta)
Verpackung:Original-Reel®
Verpackung / Gehäuse:TO-261-4, TO-261AA
Andere Namen:BSP315PXTINDKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.8nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:P-Channel 60V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.17A (Ta)
Email:[email protected]

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