Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Transistor-Typ: | 2 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | PG-SOT363-6 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 47 kOhms |
Widerstand - Basis (R1): | 47 kOhms |
Leistung - max: | 250mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 6-VSSOP, SC-88, SOT-363 |
Andere Namen: | BCR 198S H6327 BCR 198S H6327-ND BCR198SH6327XTSA1TR SP000757904 |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 190MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 190MHz 250mW Surface Mount PG-SOT363-6 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 70 @ 5mA, 5V |
Strom - Collector Cutoff (Max): | - |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |