AUIRF7769L2TR
AUIRF7769L2TR
Artikelnummer:
AUIRF7769L2TR
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 100V 375A DIRECTFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
62384 Pieces
Lieferzeit:
1-2 days
Datenblatt:
AUIRF7769L2TR.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DIRECTFET L8
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:3.5 mOhm @ 74A, 10V
Verlustleistung (max):3.3W (Ta), 125W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:DirectFET™ Isometric L8
Andere Namen:SP001522786
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:11560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:375A (Tc)
Email:[email protected]

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