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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > APTM120U10SAG
APTM120U10SAG
APTM120U10SAG
Artikelnummer:
APTM120U10SAG
Hersteller:
Microsemi
Beschreibung:
MOSFET N-CH 1200V 116A SP6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
40301 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APTM120U10SAG.pdf2.APTM120U10SAG.pdf
Anfrage

Einführung

We can supply APTM120U10SAG, use the request quote form to request APTM120U10SAG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM120U10SAG.The price and lead time for APTM120U10SAG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM120U10SAG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 20mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SP6
Serie:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 58A, 10V
Verlustleistung (max):3290W (Tc)
Verpackung:Bulk
Verpackung / Gehäuse:SP6
Andere Namen:APTM120U10SAGMI
APTM120U10SAGMI-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:28900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:1100nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1200V
detaillierte Beschreibung:N-Channel 1200V 116A (Tc) 3290W (Tc) Chassis Mount SP6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:116A (Tc)
Email:[email protected]

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