APTM100H80FT1G
Artikelnummer:
APTM100H80FT1G
Hersteller:
Microsemi
Beschreibung:
MOSFET 4N-CH 1000V 11A SP1
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
79847 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APTM100H80FT1G.pdf2.APTM100H80FT1G.pdf

Einführung

We can supply APTM100H80FT1G, use the request quote form to request APTM100H80FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM100H80FT1G.The price and lead time for APTM100H80FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM100H80FT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Supplier Device-Gehäuse:SP1
Serie:-
Rds On (Max) @ Id, Vgs:960 mOhm @ 9A, 10V
Leistung - max:208W
Verpackung:Bulk
Verpackung / Gehäuse:SP1
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3876pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
Typ FET:4 N-Channel (H-Bridge)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):1000V (1kV)
detaillierte Beschreibung:Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A
Email:[email protected]

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