APTC60DDAM35T3G
APTC60DDAM35T3G
Artikelnummer:
APTC60DDAM35T3G
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 600V 72A SP3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
72134 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APTC60DDAM35T3G.pdf2.APTC60DDAM35T3G.pdf

Einführung

We can supply APTC60DDAM35T3G, use the request quote form to request APTC60DDAM35T3G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTC60DDAM35T3G.The price and lead time for APTC60DDAM35T3G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTC60DDAM35T3G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.9V @ 5.4mA
Supplier Device-Gehäuse:SP3
Serie:-
Rds On (Max) @ Id, Vgs:35 mOhm @ 72A, 10V
Leistung - max:416W
Verpackung:Bulk
Verpackung / Gehäuse:SP3
Andere Namen:APTC60DDAM35T3GMP
APTC60DDAM35T3GMP-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:518nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 600V 72A 416W Chassis Mount SP3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:72A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung