Deutsch
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Über uns | Kontakt | Angebot anfordern |
Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > APT9F100S
APT9F100S
APT9F100S
Artikelnummer:
APT9F100S
Hersteller:
Microsemi
Beschreibung:
MOSFET N-CH 1000V 9A D3PAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45576 Pieces
Lieferzeit:
1-2 days
Datenblatt:
APT9F100S.pdf
Anfrage

Einführung

We can supply APT9F100S, use the request quote form to request APT9F100S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT9F100S.The price and lead time for APT9F100S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT9F100S.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D3Pak
Serie:POWER MOS 8™
Rds On (Max) @ Id, Vgs:1.6 Ohm @ 5A, 10V
Verlustleistung (max):337W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2606pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 9A (Tc) 337W (Tc) Surface Mount D3Pak
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung

In Verbindung stehende Teile für APT9F100S

Image Artikelnummer Hersteller Beschreibung Aussicht
APTC60AM35T1G Microsemi MOSFET 2N-CH 600V 72A SP1 Anfrage
APTC60AM45BC1G Image APTC60AM45BC1G Microsemi MOSFET 3N-CH 600V 49A SP1 Anfrage
APTC60AM42F2G Microsemi MOSFET 2N-CH 600V 66A SP2 Anfrage
APT94N65B2C6 Image APT94N65B2C6 Microsemi MOSFET N-CH 650V 95A T-MAX Anfrage
APT95GR65B2 Image APT95GR65B2 Microsemi IGBT 650V 208A 892W T-MAX Anfrage
APTC60AM24T1G Microsemi MOSFET 2N-CH 600V 95A SP1 Anfrage
APT8M100B Image APT8M100B Microsemi MOSFET N-CH 1000V 8A TO-247 Anfrage
APT9M100B Image APT9M100B Microsemi MOSFET N-CH 1000V 9A TO-247 Anfrage
APT90DR160HJ Image APT90DR160HJ Microsemi DIODE MODULE 1.6V SOT227 Anfrage
APTC60AM242G Image APTC60AM242G Microsemi MOSFET 2N-CH 600V 95A SP2 Anfrage
APT8M80K Microsemi MOSFET N-CH 800V 8A TO-220 Anfrage
APT97N65LC6 Microsemi MOSFET N-CH 650V 97A TO-264 Anfrage
APTC60AM45B1G Image APTC60AM45B1G Microsemi MOSFET 3N-CH 600V 49A SP1 Anfrage
APT94N60L2C3G Image APT94N60L2C3G Microsemi MOSFET N-CH 600V 94A TO264 Anfrage
APT95GR65JDU60 Microsemi INSULATED GATE BIPOLAR TRANSISTO Anfrage
APTC60AM18SCG Image APTC60AM18SCG Microsemi MOSFET 2N-CH 600V 143A SP6 Anfrage
APT9F100B Image APT9F100B Microsemi MOSFET N-CH 1000V 9A TO-247 Anfrage
APTC60AM24SCTG Microsemi MOSFET 2N-CH 600V 95A SP4 Anfrage
APT94N65B2C3G Image APT94N65B2C3G Microsemi MOSFET N-CH 650V 94A TO-247 Anfrage
APTC60AM35SCTG Image APTC60AM35SCTG Microsemi MOSFET 2N-CH 600V 72A SP4 Anfrage

läst Nachrichten