APT25GP120BDQ1G
APT25GP120BDQ1G
Artikelnummer:
APT25GP120BDQ1G
Hersteller:
Microsemi
Beschreibung:
IGBT 1200V 69A 417W TO247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
52057 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APT25GP120BDQ1G.pdf2.APT25GP120BDQ1G.pdf

Einführung

We can supply APT25GP120BDQ1G, use the request quote form to request APT25GP120BDQ1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT25GP120BDQ1G.The price and lead time for APT25GP120BDQ1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT25GP120BDQ1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):1200V
VCE (on) (Max) @ Vge, Ic:3.9V @ 15V, 25A
Testbedingung:600V, 25A, 5 Ohm, 15V
Td (ein / aus) bei 25 ° C:12ns/70ns
Schaltenergie:500µJ (on), 440µJ (off)
Supplier Device-Gehäuse:TO-247 [B]
Serie:POWER MOS 7®
Leistung - max:417W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Andere Namen:APT25GP120BDQ1GMI
APT25GP120BDQ1GMI-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:110nC
detaillierte Beschreibung:IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
Strom - Collector Pulsed (Icm):90A
Strom - Kollektor (Ic) (max):69A
Email:[email protected]

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