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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > APT22F120B2
APT22F120B2
APT22F120B2
Artikelnummer:
APT22F120B2
Hersteller:
Microsemi
Beschreibung:
MOSFET N-CH 1200V 23A T-MAX
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
41446 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APT22F120B2.pdf2.APT22F120B2.pdf
Anfrage

Einführung

We can supply APT22F120B2, use the request quote form to request APT22F120B2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT22F120B2.The price and lead time for APT22F120B2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT22F120B2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 2.5mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:T-MAX™ [B2]
Serie:POWER MOS 8™
Rds On (Max) @ Id, Vgs:700 mOhm @ 12A, 10V
Verlustleistung (max):1040W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:8370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1200V
detaillierte Beschreibung:N-Channel 1200V 23A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:23A (Tc)
Email:[email protected]

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