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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > AOWF4N60
AOWF4N60
AOWF4N60
Artikelnummer:
AOWF4N60
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH 600V 4A TO262F
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
59114 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.AOWF4N60.pdf2.AOWF4N60.pdf
Anfrage

Einführung

We can supply AOWF4N60, use the request quote form to request AOWF4N60 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AOWF4N60.The price and lead time for AOWF4N60 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AOWF4N60.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Serie:-
Rds On (Max) @ Id, Vgs:2.3 Ohm @ 2A, 10V
Verlustleistung (max):25W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-262-3 Full Pack, I²Pak
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:640pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:14.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 4A (Tc) 25W (Tc) Through Hole
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc)
Email:[email protected]

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