AON7416_101
Artikelnummer:
AON7416_101
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH DFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
31850 Pieces
Lieferzeit:
1-2 days
Datenblatt:
AON7416_101.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.7V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-DFN-EP (3x3)
Serie:-
Rds On (Max) @ Id, Vgs:8.5 mOhm @ 20A, 10V
Verlustleistung (max):3.1W (Ta), 25W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-VDFN Exposed Pad
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 14A (Ta), 40A (Tc) 3.1W (Ta), 25W (Tc) Surface Mount 8-DFN-EP (3x3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:14A (Ta), 40A (Tc)
Email:[email protected]

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