AOI518_001
Artikelnummer:
AOI518_001
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH 30V 18A
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
29732 Pieces
Lieferzeit:
1-2 days
Datenblatt:
AOI518_001.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.6V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:-
Serie:-
Rds On (Max) @ Id, Vgs:8 mOhm @ 20A, 10V
Verlustleistung (max):2.5W (Ta), 50W (Tc)
Verpackung:Bulk
Verpackung / Gehäuse:-
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:-
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:951pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:22.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (Tc)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:18A (Ta), 46A (Tc)
Email:[email protected]

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