AOD2N100
AOD2N100
Artikelnummer:
AOD2N100
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH 1000V 2A TO252
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
38320 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.AOD2N100.pdf2.AOD2N100.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252, (D-Pak)
Serie:-
Rds On (Max) @ Id, Vgs:9 Ohm @ 1A, 10V
Verlustleistung (max):83W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-50°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:580pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 2A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2A (Tc)
Email:[email protected]

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