ALD111933PAL
ALD111933PAL
Artikelnummer:
ALD111933PAL
Hersteller:
Advanced Linear Devices, Inc.
Beschreibung:
MOSFET 2N-CH 10.6V 8DIP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
65029 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ALD111933PAL.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.35V @ 1µA
Supplier Device-Gehäuse:8-PDIP
Serie:EPAD®
Rds On (Max) @ Id, Vgs:500 Ohm @ 5.9V
Leistung - max:500mW
Verpackung:Tube
Verpackung / Gehäuse:8-DIP (0.300", 7.62mm)
Andere Namen:1014-1051
Betriebstemperatur:0°C ~ 70°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2.5pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual) Matched Pair
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):10.6V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:-
Email:[email protected]

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