2SK3707-1E
2SK3707-1E
Artikelnummer:
2SK3707-1E
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 20A
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
33967 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2SK3707-1E.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:-
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220F-3SG
Serie:-
Rds On (Max) @ Id, Vgs:60 mOhm @ 10A, 10V
Verlustleistung (max):2W (Ta), 25W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2150pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 20A (Ta) 2W (Ta), 25W (Tc) Through Hole TO-220F-3SG
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Ta)
Email:[email protected]

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