2SK2963(TE12L,F)
2SK2963(TE12L,F)
Artikelnummer:
2SK2963(TE12L,F)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 100V 1A PW-MINI
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
10179 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.2SK2963(TE12L,F).pdf2.2SK2963(TE12L,F).pdf

Einführung

We can supply 2SK2963(TE12L,F), use the request quote form to request 2SK2963(TE12L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SK2963(TE12L,F).The price and lead time for 2SK2963(TE12L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SK2963(TE12L,F).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PW-MINI
Serie:-
Rds On (Max) @ Id, Vgs:700 mOhm @ 500mA, 10V
Verlustleistung (max):500mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-243AA
Andere Namen:2SK2963 (TE12L,F)
2SK2963FTR
2SK2963TE12LF
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:140pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1A (Ta)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung