2SB1457(T6DW,F,M)
2SB1457(T6DW,F,M)
Artikelnummer:
2SB1457(T6DW,F,M)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PNP 2A 100V TO226-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
32399 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2SB1457(T6DW,F,M).pdf

Einführung

We can supply 2SB1457(T6DW,F,M), use the request quote form to request 2SB1457(T6DW,F,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SB1457(T6DW,F,M).The price and lead time for 2SB1457(T6DW,F,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SB1457(T6DW,F,M).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):100V
VCE Sättigung (Max) @ Ib, Ic:1.5V @ 1mA, 1A
Transistor-Typ:PNP
Supplier Device-Gehäuse:TO-92MOD
Serie:-
Leistung - max:900mW
Verpackung:Bulk
Verpackung / Gehäuse:TO-226-3, TO-92-3 Long Body
Andere Namen:2SB1457(T6DWFM)
2SB1457T6DWFM
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:50MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD
DC Stromgewinn (HFE) (Min) @ Ic, VCE:2000 @ 1A, 2V
Strom - Collector Cutoff (Max):10µA (ICBO)
Strom - Kollektor (Ic) (max):2A
Email:[email protected]

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