2SA1869-Y(JKT,Q,M)
2SA1869-Y(JKT,Q,M)
Artikelnummer:
2SA1869-Y(JKT,Q,M)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PNP 3A 50V TO220-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
44137 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2SA1869-Y(JKT,Q,M).pdf

Einführung

We can supply 2SA1869-Y(JKT,Q,M), use the request quote form to request 2SA1869-Y(JKT,Q,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SA1869-Y(JKT,Q,M).The price and lead time for 2SA1869-Y(JKT,Q,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SA1869-Y(JKT,Q,M).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:600mV @ 200mA, 2A
Transistor-Typ:PNP
Supplier Device-Gehäuse:TO-220NIS
Serie:-
Leistung - max:10W
Verpackung:Bulk
Verpackung / Gehäuse:TO-220-3 Full Pack
Andere Namen:2SA1869-Y(JKTQM)
2SA1869YJKTQM
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:100MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor PNP 50V 3A 100MHz 10W Through Hole TO-220NIS
DC Stromgewinn (HFE) (Min) @ Ic, VCE:70 @ 500mA, 2V
Strom - Collector Cutoff (Max):1µA (ICBO)
Strom - Kollektor (Ic) (max):3A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung