SIHP11N80E-GE3
SIHP11N80E-GE3
Part Number:
SIHP11N80E-GE3
Výrobce:
Electro-Films (EFI) / Vishay
Popis:
MOSFET N-CH 800V 12A TO220AB
dostupné množství:
67499 Pieces
Čas doručení:
1-2 days
Datový list:
SIHP11N80E-GE3.pdf

Úvod

We can supply SIHP11N80E-GE3, use the request quote form to request SIHP11N80E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHP11N80E-GE3.The price and lead time for SIHP11N80E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHP11N80E-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 250µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-220AB
Série:E
RDS On (Max) @ Id, Vgs:440 mOhm @ 5.5A, 10V
Ztráta energie (Max):179W (Tc)
Obal:Tube
Paket / krabice:TO-220-3
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Vstupní kapacita (Ciss) (Max) @ Vds:1670pF @ 100V
Nabíjení brány (Qg) (Max) @ Vgs:88nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):800V
Detailní popis:N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB
Proud - kontinuální odtok (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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