RN1910FE(T5L,F,T)
RN1910FE(T5L,F,T)
Part Number:
RN1910FE(T5L,F,T)
Výrobce:
Toshiba Semiconductor and Storage
Popis:
TRANS 2NPN PREBIAS 0.1W ES6
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
67471 Pieces
Čas doručení:
1-2 days
Datový list:
RN1910FE(T5L,F,T).pdf

Úvod

We can supply RN1910FE(T5L,F,T), use the request quote form to request RN1910FE(T5L,F,T) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1910FE(T5L,F,T).The price and lead time for RN1910FE(T5L,F,T) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1910FE(T5L,F,T).We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Napětí - kolektoru emitoru Breakdown (Max):50V
VCE Saturation (Max) @ IB, IC:300mV @ 250µA, 5mA
Transistor Type:2 NPN - Pre-Biased (Dual)
Dodavatel zařízení Package:ES6
Série:-
Resistor - emitorová základna (R2):-
Rezistor - základna (R1):4.7 kOhms
Power - Max:100mW
Obal:Cut Tape (CT)
Paket / krabice:SOT-563, SOT-666
Ostatní jména:RN1910FE(T5LFT)CT
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Frekvence - Přechod:250MHz
Detailní popis:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Aktuální - sběratel Cutoff (Max):100nA (ICBO)
Proud - Collector (Ic) (Max):100mA
Email:[email protected]

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