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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXTA08N100D2HV
IXTA08N100D2HV
IXTA08N100D2HV
Part Number:
IXTA08N100D2HV
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH
dostupné množství:
72930 Pieces
Čas doručení:
1-2 days
Datový list:
IXTA08N100D2HV.pdf
Dotaz

Úvod

We can supply IXTA08N100D2HV, use the request quote form to request IXTA08N100D2HV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA08N100D2HV.The price and lead time for IXTA08N100D2HV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA08N100D2HV.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 25µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-263HV
Série:-
RDS On (Max) @ Id, Vgs:21 Ohm @ 400mA, 0V
Ztráta energie (Max):60W (Tc)
Paket / krabice:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Výrobní standardní doba výroby:24 Weeks
Vstupní kapacita (Ciss) (Max) @ Vds:325pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:14.6nC @ 5V
Typ FET:N-Channel
FET Feature:Depletion Mode
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):0V
Drain na zdroj napětí (Vdss):1000V
Detailní popis:N-Channel 1000V 800mA (Tj) 60W (Tc) Surface Mount TO-263HV
Proud - kontinuální odtok (Id) @ 25 ° C:800mA (Tj)
Email:[email protected]

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