IPI041N12N3GAKSA1
IPI041N12N3GAKSA1
Part Number:
IPI041N12N3GAKSA1
Výrobce:
International Rectifier (Infineon Technologies)
Popis:
MOSFET N-CH 120V 120A TO262-3
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
10521 Pieces
Čas doručení:
1-2 days
Datový list:
IPI041N12N3GAKSA1.pdf

Úvod

We can supply IPI041N12N3GAKSA1, use the request quote form to request IPI041N12N3GAKSA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPI041N12N3GAKSA1.The price and lead time for IPI041N12N3GAKSA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPI041N12N3GAKSA1.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 270µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:PG-TO262-3
Série:OptiMOS™
RDS On (Max) @ Id, Vgs:4.1 mOhm @ 100A, 10V
Ztráta energie (Max):300W (Tc)
Obal:Tube
Paket / krabice:TO-262-3 Long Leads, I²Pak, TO-262AA
Ostatní jména:IPI041N12N3 G
IPI041N12N3 G-ND
IPI041N12N3G
SP000652748
Provozní teplota:-55°C ~ 175°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:13800pF @ 60V
Nabíjení brány (Qg) (Max) @ Vgs:211nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):120V
Detailní popis:N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
Proud - kontinuální odtok (Id) @ 25 ° C:120A (Tc)
Email:[email protected]

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