صورة |
رقم القطعة |
مصنعين |
وصف |
رأي |
|
28370621 A |
Cypress Semiconductor |
IC FLASH |
تحقيق |
|
M93C66-RMN3TP/K |
STMicroelectronics |
IC EEPROM 4K SPI 2MHZ 8SO |
تحقيق |
|
THGBMDG5D1LBAIT |
Toshiba Memory America, Inc. |
IC FLASH 32G MMC 52MHZ 153WFBGA |
تحقيق |
|
IS39LV010-70VCE |
ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1M PARALLEL 32VSOP |
تحقيق |
|
THGBMHG6C1LBAIL |
Toshiba Memory America, Inc. |
IC FLASH 64G MMC 52MHZ 153WFBGA |
تحقيق |
|
THGBMHG8C2LBAIL |
Toshiba Memory America, Inc. |
IC FLASH 256G MMC 153WFBGA |
تحقيق |
|
THGAF8G9T43BAIR |
Toshiba Memory America, Inc. |
IC FLASH 512G UFS 153VFBGA |
تحقيق |
|
THGBMHG9C4LBAIR |
Toshiba Memory America, Inc. |
IC FLASH 512G MMC 153WFBGA |
تحقيق |
|
IS61NLP12836B-200B2LI |
ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5M PARALLEL 119PBGA |
تحقيق |
|
S26KS256SDPBHN020 |
Cypress Semiconductor |
IC FLASH 256M PARALLEL 24FBGA |
تحقيق |
|
THGBMHG9C8LBAWG |
Toshiba Memory America, Inc. |
IC FLASH 512G MMC 153WFBGA |
تحقيق |
|
THGAF8G8T23BAIL |
Toshiba Memory America, Inc. |
IC FLASH 256G UFS 153WFBGA |
تحقيق |
|
THGBMHG7C1LBAIL |
Toshiba Memory America, Inc. |
IC FLASH 128G MMC 153WFBGA |
تحقيق |
|
THGAF8T1T83BAIR |
Toshiba Memory America, Inc. |
IC FLASH 2T UFS 153VFBGA |
تحقيق |
|
THGBMHG8C4LBAWR |
Toshiba Memory America, Inc. |
IC FLASH 256G MMC 153WFBGA |
تحقيق |
|
S34ML02G200BHI500 |
Cypress Semiconductor |
IC FLASH 2G PARALLEL 63BGA |
تحقيق |
|
IDT71V3557SA75BGG |
IDT (Integrated Device Technology) |
IC SRAM 4.5M PARALLEL 119PBGA |
تحقيق |
|
THGBMHG7C2LBAWR |
Toshiba Memory America, Inc. |
IC FLASH 128G MMC 153WFBGA |
تحقيق |
|
THGBMHG6C1LBAWL |
Toshiba Memory America, Inc. |
IC FLASH 64G MMC 52MHZ 153WFBGA |
تحقيق |
|
IS61LF51236A-6.5B3 |
ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18M PARALLEL 165TFBGA |
تحقيق |