TPS1101DR
Part Number:
TPS1101DR
Manufacturer:
TI
Description:
MOSFET P-CH 15V 2.3A 8-SOIC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
22825 Pieces
Delivery Time:
1-2 days
Data sheet:
TPS1101DR.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for TPS1101DR, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TPS1101DR by email, we will give you a best price according your plan.
Buy TPS1101DR with BYCHPS
Buy with guarantee

Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):+2V, -15V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:90 mOhm @ 2.5A, 10V
Power Dissipation (Max):791mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:11.25nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Drain to Source Voltage (Vdss):15V
Detailed Description:P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments