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SIHD5N50D-GE3
- Part Number:
- SIHD5N50D-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 500V 5.3A TO252 DPK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 38915 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SIHD5N50D-GE3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-252AA |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
| Power Dissipation (Max): | 104W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | SIHD5N50D-GE3CT SIHD5N50D-GE3CT-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 500V |
| Detailed Description: | N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
| Email: | [email protected] |
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