SI4410BDY-T1-GE3
Part Number:
SI4410BDY-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 30V 7.5A 8-SOIC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
11717 Pieces
Delivery Time:
1-2 days
Data sheet:
SI4410BDY-T1-GE3.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for SI4410BDY-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI4410BDY-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:13.5 mOhm @ 10A, 10V
Power Dissipation (Max):1.4W (Ta)
Packaging:Cut Tape (CT)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4410BDY-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:20nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
Email:[email protected]

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