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SI3458BDV-T1-GE3
- Part Number:
- SI3458BDV-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 60V 4.1A 6-TSOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 53619 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SI3458BDV-T1-GE3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-TSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3.2A, 10V |
| Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3458BDV-T1-GE3-ND SI3458BDV-T1-GE3TR SI3458BDVT1GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 33 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
| Email: | [email protected] |
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