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RN1106MFV(TL3,T)
- Part Number:
- RN1106MFV(TL3,T)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANS PREBIAS NPN 0.15W VESM
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 10394 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- RN1106MFV(TL3,T).pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | VESM |
| Series: | - |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 4.7 kOhms |
| Power - Max: | 150mW |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SOT-723 |
| Other Names: | RN1106MFV(TL3T)CT |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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