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HGTP10N120BN
- Part Number:
- HGTP10N120BN
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- IGBT 1200V 35A 298W TO220AB
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 68021 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- 1.HGTP10N120BN.pdf2.HGTP10N120BN.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 10A |
| Test Condition: | 960V, 10A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 23ns/165ns |
| Switching Energy: | 320µJ (on), 800µJ (off) |
| Supplier Device Package: | TO-220AB |
| Series: | - |
| Power - Max: | 298W |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | HGTP10N120BN-ND HGTP10N120BNFS |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Type: | Standard |
| IGBT Type: | NPT |
| Gate Charge: | 100nC |
| Detailed Description: | IGBT NPT 1200V 35A 298W Through Hole TO-220AB |
| Current - Collector Pulsed (Icm): | 80A |
| Current - Collector (Ic) (Max): | 35A |
| Email: | [email protected] |
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