FQPF3N80CYDTU
FQPF3N80CYDTU
Part Number:
FQPF3N80CYDTU
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 800V 3A TO-220F
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
60864 Pieces
Delivery Time:
1-2 days
Data sheet:
FQPF3N80CYDTU.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F-3 (Y-Forming)
Series:QFET®
Rds On (Max) @ Id, Vgs:4.8 Ohm @ 1.5A, 10V
Power Dissipation (Max):39W (Tc)
Packaging:Tube
Package / Case:TO-220-3 Full Pack, Formed Leads
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:705pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Email:[email protected]

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