FDC021N30
FDC021N30
Part Number:
FDC021N30
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
PT8 N 30V/20V, MOSFET
Available Quantity:
5777 Pieces
Delivery Time:
1-2 days
Data sheet:
FDC021N30.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SuperSOT™-6
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:26 mOhm @ 6.1A, 10V
Power Dissipation (Max):700mW (Ta)
Packaging:Original-Reel®
Package / Case:SOT-23-6
Other Names:FDC021N30DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Input Capacitance (Ciss) (Max) @ Vds:710pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:10.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:6.1A (Ta)
Email:[email protected]

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