FCP125N65S3
Part Number:
FCP125N65S3
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 650V 125MOHM TO220
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
75187 Pieces
Delivery Time:
1-2 days
Data sheet:
FCP125N65S3.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4.5V @ 2.4mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:SuperFET® III
Rds On (Max) @ Id, Vgs:125 mOhm @ 12A, 10V
Power Dissipation (Max):181W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1940pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Email:[email protected]

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