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FCB199N65S3
- Part Number:
- FCB199N65S3
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 650V 14A D2PAK
- Available Quantity:
- 31188 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- FCB199N65S3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 4.5V @ 1.4mA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D²PAK (TO-263) |
| Series: | SuperFET® III |
| Rds On (Max) @ Id, Vgs: | 199 mOhm @ 7A, 10V |
| Power Dissipation (Max): | 98W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 1225pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 14A (Tc) 98W (Tc) Surface Mount D²PAK (TO-263) |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Email: | [email protected] |
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