BSM180D12P2C101
BSM180D12P2C101
Part Number:
BSM180D12P2C101
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET 2N-CH 1200V 180A MODULE
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
49947 Pieces
Delivery Time:
1-2 days
Data sheet:
1.BSM180D12P2C101.pdf2.BSM180D12P2C101.pdf3.BSM180D12P2C101.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 35.2mA
Supplier Device Package:Module
Series:-
Rds On (Max) @ Id, Vgs:-
Power - Max:1130W
Packaging:Bulk
Package / Case:Module
Operating Temperature:-40°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
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