BAS316,H3F
Part Number:
BAS316,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
DIODE GEN PURP 100V 250MA USC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
33932 Pieces
Delivery Time:
1-2 days
Data sheet:
BAS316,H3F.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Forward (Vf) (Max) @ If:1.25V @ 150mA
Voltage - DC Reverse (Vr) (Max):100V
Supplier Device Package:USC
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):3ns
Package / Case:SC-76, SOD-323
Other Names:BAS316H3F
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Diode Type:Standard
Detailed Description:Diode Standard 100V 250mA Surface Mount USC
Current - Reverse Leakage @ Vr:200nA @ 80V
Current - Average Rectified (Io):250mA
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
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