1N5807US
1N5807US
Part Number:
1N5807US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 50V 3A B-MELF
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
8685 Pieces
Delivery Time:
1-2 days
Data sheet:
1N5807US.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for 1N5807US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N5807US by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Forward (Vf) (Max) @ If:875mV @ 4A
Voltage - DC Reverse (Vr) (Max):50V
Supplier Device Package:B, SQ-MELF
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):30ns
Packaging:Bulk
Package / Case:SQ-MELF, B
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 50V 3A Surface Mount B, SQ-MELF
Current - Reverse Leakage @ Vr:5µA @ 50V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:60pF @ 10V, 1MHz
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