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Huis > producten > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STQ1NK80ZR-AP
STQ1NK80ZR-AP
STQ1NK80ZR-AP
Onderdeel nummer:
STQ1NK80ZR-AP
Fabrikant:
STMicroelectronics
Beschrijving:
MOSFET N-CH 800V 0.3A TO-92
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
61871 Pieces
Aflevertijd:
1-2 days
Data papier:
STQ1NK80ZR-AP.pdf
Onderzoek

Invoering

We can supply STQ1NK80ZR-AP, use the request quote form to request STQ1NK80ZR-AP pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STQ1NK80ZR-AP.The price and lead time for STQ1NK80ZR-AP depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STQ1NK80ZR-AP.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-92-3
Serie:SuperMESH™
Rds On (Max) @ Id, VGS:16 Ohm @ 500mA, 10V
Vermogensverlies (Max):3W (Tc)
Packaging:Tape & Box (TB)
Verpakking / doos:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Andere namen:497-6197-3
STQ1NK80ZRAP
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:38 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):800V
gedetailleerde beschrijving:N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Current - Continuous Drain (Id) @ 25 ° C:300mA (Tc)
Email:[email protected]

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