STQ1NK80ZR-AP
STQ1NK80ZR-AP
Artikelnummer:
STQ1NK80ZR-AP
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 800V 0.3A TO-92
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61871 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STQ1NK80ZR-AP.pdf

Einführung

We can supply STQ1NK80ZR-AP, use the request quote form to request STQ1NK80ZR-AP pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STQ1NK80ZR-AP.The price and lead time for STQ1NK80ZR-AP depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STQ1NK80ZR-AP.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-92-3
Serie:SuperMESH™
Rds On (Max) @ Id, Vgs:16 Ohm @ 500mA, 10V
Verlustleistung (max):3W (Tc)
Verpackung:Tape & Box (TB)
Verpackung / Gehäuse:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Andere Namen:497-6197-3
STQ1NK80ZRAP
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:38 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:300mA (Tc)
Email:[email protected]

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