SI5913DC-T1-GE3
SI5913DC-T1-GE3
Onderdeel nummer:
SI5913DC-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 20V 4A 1206-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
27443 Pieces
Aflevertijd:
1-2 days
Data papier:
SI5913DC-T1-GE3.pdf

Invoering

We can supply SI5913DC-T1-GE3, use the request quote form to request SI5913DC-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5913DC-T1-GE3.The price and lead time for SI5913DC-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5913DC-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:1206-8 ChipFET™
Serie:LITTLE FOOT®
Rds On (Max) @ Id, VGS:84 mOhm @ 3.7A, 10V
Vermogensverlies (Max):1.7W (Ta), 3.1W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:8-SMD, Flat Lead
Andere namen:SI5913DC-T1-GE3CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):2.5V, 10V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:P-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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