SI5908DC-T1-E3
SI5908DC-T1-E3
Onderdeel nummer:
SI5908DC-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET 2N-CH 20V 4.4A 1206-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
38041 Pieces
Aflevertijd:
1-2 days
Data papier:
SI5908DC-T1-E3.pdf

Invoering

We can supply SI5908DC-T1-E3, use the request quote form to request SI5908DC-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5908DC-T1-E3.The price and lead time for SI5908DC-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5908DC-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Leverancier Device Pakket:1206-8 ChipFET™
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:40 mOhm @ 4.4A, 4.5V
Vermogen - Max:1.1W
Packaging:Tape & Reel (TR)
Verpakking / doos:8-SMD, Flat Lead
Andere namen:SI5908DC-T1-E3TR
SI5908DCT1E3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:33 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25 ° C:4.4A
Base Part Number:SI5908
Email:[email protected]

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